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MRF21045LR3 MRF21045LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
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Typical 2--carrier W--CDMA Performance for VDD
=28Volts,IDQ
=500mA,
f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels
measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz,
Distortion Products measured over a 3.84 MHz Bandwidth at f1 --10 MHz
and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power ? 10 Watts Avg.
Efficiency ? 23.5%
Gain ? 15 dB
IM3?--37.5dBc
ACPR ? --41 dBc
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Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
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Internally Matched for Ease of Use
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High Gain, High Efficiency and High Linearity
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Integrated ESD Protection
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Designed for Maximum Gain and Insertion Phase Flatness
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Excellent Thermal Stability
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Characterized with Series Equivalent Large--Signal Impedance Parameters
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Low Gold Plating Thickness on Leads, 40μ″
Nominal.
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RoHS Compliant
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In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC
=25°C
Derate above 25°C
PD
105
0.60
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
RθJC
1.65
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF21045
Rev. 12, 10/2008
Freescale Semiconductor
Technical Data
MRF21045LR3
MRF21045LSR3
2110--2170 MHz, 45 W, 28 V
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465E--04, STYLE 1
NI--400
MRF21045LR3
CASE 465F--04, STYLE 1
NI--400S
MRF21045LSR3
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Freescale Semiconductor, Inc., 2008.
All rights reserved.
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